Na掺杂含量对ZnO：Nax薄膜结构和光电性能的影响  

Effect of Na Doping Content on the Structural and Electrical Properties of ZnO:Na_x Films

作　　者：郑展[1] 陈凌翔[1] 叶志镇[1] 

机构地区：[1]浙江大学硅材料国家重点实验室.浙江杭州310027

出　　处：《材料科学与工程学报》2013年第1期23-26,132,共5页Journal of Materials Science and Engineering

基　　金：教育部高等学校科技创新工程重大项目培育资金资助项目(707035)

摘　　要：利用激光脉冲沉积法(PLD)制备了Na掺杂ZnO∶Nax薄膜(0≤x≤0.1),并较全面地研究了Na含量对ZnO∶Nax薄膜结晶质量和光电性能的影响。研究结果表明Na含量低于5%时,ZnO∶Nax薄膜能够保持良好的c轴择优取向生长。随着Na含量的增加,薄膜由本征n型转变为p型。并且当Na含量为2%时,获得p型性能良好的薄膜:电阻率为53.5Ωcm,迁移率为0.55cm2V-1s-1,空穴浓度为2.1×1017cm-3。结合XPS测试结果,我们认为p型转变是因为Na掺杂在ZnO中主要形成受主态NaZn。PL测试表明ZnO∶Na0.0 2薄膜在377nm处具有良好的室温紫外带边发射。Na-doped ZnO Nax films were prepared by pulsed laser deposition（PLD）, and the effect of Na doping content on the structural, electrical and optical properties were investigated. X-ray diffraction results shows that all ZnO： Nax films（x〈5%） are wurtzite, with the preferential orientation of （002）. Conduction behavior conversion from n type to p type with increasing Na doping content was discovered, and high performance p-type film was obtained at Na of 2 %. X-ray photoelectron spectroscopy （XPS） results reveal that the p type behavior resulting from Na doping content increasing can be attributed to the formation of Naz. acceptor. For p-type ZNO Na0.02 film, the resistivity, mobilty and hole concentration are 53.5Ωcm, 0. 55cmz V-is-1 and 2.1 X 1017 cm-a respectively. Moreover, room temperature photoluminescence（PL） spectra show strong near-band-gap emission in the ZnO： Nao.02 film.

关 键 词：Na掺杂 P型 紫外带边发射 受主态NaZn 

分 类 号：TB43[一般工业技术]