高性能P-型有机薄膜晶体管材料(OTFT)进展  

Progress in high performance p-type organic thin-film transistors(OTFT)

作　　者：陈珺[1] 

机构地区：[1]华侨大学材料科学与工程学院,福建厦门361021

出　　处：《化学工程与装备》2013年第2期118-121,共4页Chemical Engineering & Equipment

摘　　要：有机薄膜晶体管(Organic Thin Film Transistors OTFT)以其工艺简单,成本低廉及柔韧性良好等优势,受到人们日益重视和广泛的研究,逐步成为下一代显示技术的核心。本综述根据制备方法的不同,主要针对真空沉淀此种OTFT器件的制备方法,对高迁移率的P-型有机薄膜晶体管材料的近期进展进行总结和评述。Organic Thin Film Transistors OTFT have attracted much attention owing to advantages such as simple fabrication process, low cost and mechanical flexibility. They also have been the focus of the next generation display technology. This article reviewed the recent advances in high mobility semieonduetingmaterials for p-type organic thin-film transistors whieh were mainly fabricated by Vacuum-Deposited.

关 键 词：有机薄膜晶体管 场致迁移率 真空沉淀 稠环化合物 低聚噻吩 

分 类 号：TN321.5[电子电信—物理电子学]