Highly nonlinear property and threshold voltage of Sc_2O_3 doped ZnO-Bi_2O_3-based varistor ceramics  

作　　者：徐东 吴婕婷 焦雷 徐红星 张培枚 于仁红 程晓农 

机构地区：[1]School of Material Science and Engineering,Jiangsu University [2]Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences [3]State Key Laboratory of Electrical Insulation and Power Equipment,Xi'an Jiaotong University [4]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China [5]Changzhou Engineering Research Institute of Jiangsu University [6]Changzhou Ming Errui Ceramics Co.,Ltd.

出　　处：《Journal of Rare Earths》2013年第2期158-163,共6页稀土学报（英文版）

基　　金：Project supported by Natural Science Foundation of Jiangsu Province(BK2011243,BK2012156);the Specialized Research Fund for the Doctoral Program of Higher Education of China(20123227120021);Universities Natural Science Research Project of Jiangsu Province(10KJD430002);financially supported by the State Key Laboratory of Electrical Insulation and Power Equipment(EIPE11204);State Key Laboratory of New Ceramic and Fine Processing(KF201104);Project supported by the Opening Project of State key Laboratory of Electronic ThinFilms and Integrated Devices(KFJJ201105);Research Foundation of Jiangsu University(11JDG084);Application Program for Basic Research of Changzhou(CJ20125001)

摘　　要：A series of ZnO-Bi2O3-based varistor ceramics doped with 0-0.4 mol.% Sc2O3 were prepared by high-energy ball milling and sintered at temperatures between 1000 and 1150oC. X-ray diffractometry （XRD） and scanning electron microscopy （SEM） were applied to characterize the phases and microstructure of the varistor ceramics. A DC parameter instrument for varistor ceramics was applied to investigate the electronic properties and V-I characteristics. The results showed that there were no changes in crystal structure with Sc2O3-doped varistor ceramics and that the average size of ZnO grain increased first and then decreased. The best electronic characteristics of the varistor ceramics prepared by high-energy ball milling were found in 0.3 mol.% Sc2O3-doped ZnO-Bi2O3 -based ceramics sintered at 1000 oC, which exhibited a threshold voltage of 821 V/mm, nonlinear coefficient of 62.1 and leakage current of 0.16 μA.A series of ZnO-Bi2O3-based varistor ceramics doped with 0-0.4 mol.% Sc2O3 were prepared by high-energy ball milling and sintered at temperatures between 1000 and 1150oC. X-ray diffractometry （XRD） and scanning electron microscopy （SEM） were applied to characterize the phases and microstructure of the varistor ceramics. A DC parameter instrument for varistor ceramics was applied to investigate the electronic properties and V-I characteristics. The results showed that there were no changes in crystal structure with Sc2O3-doped varistor ceramics and that the average size of ZnO grain increased first and then decreased. The best electronic characteristics of the varistor ceramics prepared by high-energy ball milling were found in 0.3 mol.% Sc2O3-doped ZnO-Bi2O3 -based ceramics sintered at 1000 oC, which exhibited a threshold voltage of 821 V/mm, nonlinear coefficient of 62.1 and leakage current of 0.16 μA.

关 键 词：CERAMICS VARISTORS rare earth alloys and compounds microstructure electrical properties 

分 类 号：TQ174.1[化学工程—陶瓷工业]