In含量对Ge-In-Se薄膜光学特性的影响(英文)  

Effect of In Content on Optical Properties of Ge-In-Se Thin Films

作　　者：陈芬[1] 王永辉[1] 聂秋华[1] 王国祥[1] 陈昱[1] 沈祥[1] 戴世勋[1] 

机构地区：[1]宁波大学信息科学与工程学院,浙江宁波315211

出　　处：《硅酸盐学报》2013年第3期388-391,共4页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金项目(61008041,60978058);宁波市创新团队项目(2009B21007);宁波市自然基金项目(2011A61-0092);宁波大学王宽诚幸福基金项目;宁波大学研究生科研创新基金;宁波大学大学生科技创新(SRIP)基金资助

摘　　要：采用磁控溅射法制备了Ge-In-Se硫系薄膜,利用X射线衍射、可见-近红外吸收光谱和Raman光谱分析等技术对Ge-In-Se硫系薄膜的相态、结构和光学特性进行了研究和分析。结果表明:该Ge-In-Se薄膜具有良好的非晶特性。Raman光谱分析表明:[GeSe4]四面体Ge—Se键的高频振动模式是该薄膜的主要振动模式之一,且Ge—Se键的振动强度随着In含量的增加而减小;当In的含量达到13.87%(摩尔分数)时,[GeSe4]四面体消失,而[InSe4]四面体的对称伸缩振动模式成为了主要振动模式。采用Swanepoel方法和经典Tauc方程计算发现:随着In含量增加,该薄膜的短波吸收限红移,折射率逐渐增大,光学带隙逐渐减小。Amorphous Ge-In-Se thin films were prepared by a magnetron co-sputtering technique. The morphology, structure and optical properties of the thin films were analyzed by X-ray diffraction, visible/near-infrared transmission spectroscopy and Raman spectroscopy, respectively. The results show that the Ge-In-Se thin films have the amorphous characteristics. It was indicated that the high frequency vibration mode of Ge-Se bond in [GeSe4] tetrahedral was the main one in the Ge-In-Se thin films, and the vibration intensity decreased with increasing In content. When In content was 13.87% in mole, the [GeSe4] tetrahedral disappears and [InSe4] tetrahedral became the dominate structure. According to the analysis by the Swanepoel method and the classic Tauc equation, it was found that the red shift appeared at a short-wavelength absorption edge, the refractive index increased and the optical band gap decreased with the increase of In content.

关 键 词：锗-铟-硒薄膜 光学带隙 Raman分析 

分 类 号：TQ171.734[化学工程—玻璃工业]