An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator  

作　　者：Li-heng LOU Ling-ling SUN Jun LIU Hai-jun GAO 

机构地区：[1]Institute of VLSI Design,Zhejiang University [2]MOE Key Laboratory of RF Circuits and Systems,Hangzhou Dianzi University

出　　处：《Journal of Zhejiang University-Science C(Computers and Electronics)》2013年第3期205-213,共9页浙江大学学报C辑（计算机与电子（英文版）

基　　金：Project supported by the National Basic Research Program (973) of China (No. 2010CB327403);the National Natural Science Foundation of China (Nos. 61001066 and 61102027)

摘　　要：This paper proposes an efficient PSP-based model for cross-coupled metal-oxide-semiconductor field-effect transistors(MOSFETs) with optimized layout in the voltage controlled oscillator(VCO).The model employs a PSP charge model to characterize the bias-dependent extrinsic capacitance instead of numerical functions with strong non-linearity.The simulation convergence is greatly improved by this method.An original scheme is developed to extract the parameters of the PSP charge model based on S-parameters measurement.The interconnection parasitics of the cross-coupled MOSFETs are modeled based on vector fitting.The model is verified with an LC VCO design,and exhibits excellent convergence during simulation.The results show improvements as high as 60.5% and 61.8% in simulation efficiency and accuracy,respectively,indicating that the proposed model better characterizes optimized cross-coupled MOSFETs in advanced radio frequency(RF) circuit design.This paper proposes an efficient PSP-based model for cross-coupled metal-oxide-semiconductor field-effect transistors（MOSFETs） with optimized layout in the voltage controlled oscillator（VCO）.The model employs a PSP charge model to characterize the bias-dependent extrinsic capacitance instead of numerical functions with strong non-linearity.The simulation convergence is greatly improved by this method.An original scheme is developed to extract the parameters of the PSP charge model based on S-parameters measurement.The interconnection parasitics of the cross-coupled MOSFETs are modeled based on vector fitting.The model is verified with an LC VCO design,and exhibits excellent convergence during simulation.The results show improvements as high as 60.5% and 61.8% in simulation efficiency and accuracy,respectively,indicating that the proposed model better characterizes optimized cross-coupled MOSFETs in advanced radio frequency（RF） circuit design.

关 键 词：Layout optimizing Modeling PSP Charge model Cross-coupled Metal-oxide-semiconductor(MOS) Voltage controlled oscillator(VCO) 

分 类 号：TP13[自动化与计算机技术—控制理论与控制工程]