ADP晶体的全方位生长方法研究(英文)  

Study on an All-Dimension Growth Method for ADP Crystals

作　　者：马江涛[1,2] 滕冰[1,2] 钟德高[1,2] 曹丽凤[1,2] 温吉龙[1,2] Romano A.Rupp 

机构地区：[1]青岛大学物理科学学院,青岛266071 [2]青岛大学山东省高校光子学材料与技术重点实验室,青岛266071 [3]Faculty of Physics,Vienna University

出　　处：《人工晶体学报》2013年第2期208-212,共5页Journal of Synthetic Crystals

基　　金：supported by the National Natural Science Foundation of China(10979029,11204148 and 51172111);the Fundof National Engineering Research Center for Optoelectronic Crystalline Materials(2007k08)

摘　　要：采用一种全新的ADP晶体生长方法,使晶体首先恢复其理想外形,实现晶体的全方位生长,从而提高晶体的生长速度。并对所得晶体进行了透过率,激光散射,摇摆曲线测试及热重差热分析,与常规生长方法比较并分析了全方位生长方法的优势。Using a new all-dimension method, ADP crystals were grown by at first recovering their crystallographic morphology, and then expanding along every dimension, thus improving the growth speed. The quality of crystal was evaluated by transmittance, laser scattering, dislocation etching pits, high-resolution X-ray diffraction, thermal gravimetric and differential thermal analysis. The advantages of the all-dimension growth technique with respect to the conventional growth method are pointed out.

关 键 词：ADP晶体 全方位生长 理想外形 生长速度 

分 类 号：O78[理学—晶体学]