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机构地区:[1]西安电子科技大学微电子学院,陕西西安710071 [2]西安工业大学光电工程学院,陕西西安710032
出 处:《光电子.激光》2013年第3期419-423,共5页Journal of Optoelectronics·Laser
基 金:国家总装备部共性技术支撑(4040503104);国家自然科学基金(50975228);教育厅项目(12JK0980);西安市科创新计划(CXY1007-3)资助项目
摘 要:采用金属有机物化学气相沉积法(MOCVD)生长了两种不同结构参数的GaAs/Al0.3Ga0.7As红外量子阱材料,利用傅里叶光谱仪,分别对阱宽为4.5与5.0nm的样品进行77K液氮温度下光谱响应测试及室温光致发光(PL)光谱测试,样品的峰值响应波长分别为8.39、7.69μm,与根据薛定谔方程计算得到的峰值波长8.92、8.05μm的误差分别为6.36%、4.70%。对吸收峰向高能方向发生漂移的现象进行了分析讨论,认为势阱变窄时阱中的应力作用较强是导致峰值波长红移的原因,而与GaAs阱中进行适度Si掺杂无关。PL实验结果与理论计算相符合,表明增加阱宽是量子阱带间跃迁能量升高的原因。据此可实现对量子阱能级的微调,从而满足对不同波长探测的需要。In order to determine the relationship between the well width and the peak wavelength of quantum well infrared photodetector (QWIP),the detailed structure parameters of two sample devices based on the bound to the quasi bound state transitions (b-qbQWIP) are designed and corresponding tests such as spectroscopic response and photoluminescence (PL) spectra, are done. The GaAs/Al0.3Ga0.7As infrared quantum well materials with different structure parameters has been grown by using metal organic chemical vapor deposition (MOCVD). The spectroscopic response is measured at 77 K by Fourier transform spectrometer,while the photoluminescence (PL) spectra are tested at room temperature for two sample devices of GaAs/Al0.3Ga0.7As quantum well infrared photodetectors with well widths of 4. 5 nm and 5.0 rim,respectively. Peak wavelengths of sample 1 # and 2 # are 8. 39μm and 7.69 μm from results, while the ones are 8. 92μm and 8. 05 μm according to Schrodinger equation, and the error between them is 6.36 %,4. 70%, respectively. It is studied that the peak absorption shifts to high-energy region, which shows that it is the strong stress but not the doping Si in well that leads to peak wavelength redshift. The PL results are consistent with theoretical simulation. The increased well width leads to interband transition energy going up. Results show that changing well width can adjust the peak wavelength of QWIP indeed.
关 键 词:量子阱红外探测器(QWIP) 阱宽 光谱响应 光致发光(PL)光谱
分 类 号:TN215[电子电信—物理电子学]
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