A high-voltage SOI MOSFET with a compensation layer on the trenched buried oxide layer  

作　　者：赵秋明 李琦 唐宁 李勇昌 

机构地区：[1]School of Information and Communication,Guilin University of Electronic Technology [2]Guilin Strong Micro Electronics Co.,Ltd

出　　处：《Journal of Semiconductors》2013年第3期31-34,共4页半导体学报（英文版）

基　　金：supported by the Guangxi Natural Science Foundation of China(No.2010GXNSFB013054);the Guangxi Key Science and Technology Program ofChina(No.11107001-20)

摘　　要：A new silicon-on-insulator(SOI) high-voltage MOSFET structure with a compensation layer on the trenched buried oxide layer(CL T-LDMOS) is proposed.The high density inverse interface charges at the top surface of the buried oxide layer(BOX) enhance the electric field in the BOX and a uniform surface electric field profile is obtained,which results in the enhancement of the breakdown voltage(BV).The compensation layer can provide additional P-type charges,and the optimal drift region concentration is increased in order to satisfy the reduced surface electric field(RESURF) condition.The numerical simulation results indicate that the vertical electric field in the BOX increases to 6 MV/cm and the B V of the proposed device increases by 300%in comparison to a conventional SOI LDMOS,while maintaining low on-resistance.A new silicon-on-insulator （SOl） high-voltage MOSFET structure with a compensation layer on the trenched buried oxide layer （CL T-LDMOS） is proposed. The high density inverse interface charges at the top surface of the buried oxide layer （BOX） enhance the electric field in the BOX and a uniform surface electric field profile is obtained, which results in the enhancement of the breakdown voltage （BV）. The compensation layer can provide additional P-type charges, and the optimal drift region concentration is increased in order to satisfy the reduced surface electric field （RESURF） condition. The numerical simulation results indicate that the vertical electric field in the BOX increases to 6 MV/cm and the BV of the proposed device increases by 300% in comparison to a conventional SOl LDMOS, while maintaining low on-resistance.

关 键 词：trenched buried oxide layer breakdown voltage ON-RESISTANCE compensation layer 

分 类 号：TN386.1[电子电信—物理电子学]