Structure and microwave properties analysis of substrate removed GaAs/AIGaAs electro-optic modulator structure by finite element method  

作　　者：Kambiz ABEDI Habib VAHIDI 

机构地区：[1]Department of Electrical Engineering, Faculty of Electrical and Computer Engineering, Shahid Beheshti University, Tehran 1983963113, Iran

出　　处：《Frontiers of Optoelectronics》2013年第1期108-113,共6页光电子前沿（英文版）

分 类 号：TN3[电子电信—物理电子学]