FeSe0.4Te0．6超导薄膜的输运性质实验研究  

Research on transport properties of superconducting FeSe_(0.4)Te_(0.6)thin film

作　　者：杨传森[1,2] 曹立新[1] 张鹰子[1] 陈宁[2] 刘丽华[2] 李位勇[1] 韩烨[1] 许波[1] 范慧[1] 黄文斌[1] 郑亚男[1,3] 崔丽华[1,3] 胡旻卉 朱北沂[1] 

机构地区：[1]中国科学院物理研究所超导国家重点实验室,北京100190 [2]北京科技大学材料科学与工程学院,北京100083 [3]华南理工大学物理学院,广州640511

出　　处：《低温与超导》2013年第3期34-37,共4页Cryogenics and Superconductivity

摘　　要：通过脉冲激光沉积技术制备了超导转变温度约为12 K的FeSe0.4Te0.6超导薄膜,测量了该薄膜晶体结构和在磁场(0-12 T)下的电输运性质。分别用传统的Arrhenius Plots和一种更精确的关系对薄膜的TAFF区的热激活能进行了分析,得到激活能对磁场和温度的指数关系;对两种方法分析结果分析比较,发现第二种方法的分析结果更符合FeSe0.4Te0.6超导薄膜的测量结果。估算了FeSe0.4Te0.6超导薄膜的玻璃态转变温度、上临界场Hc2(0)和相干长度。We successfully deposited the purely c -axis oriented FeSe0.4Te0.6thin film, which showed superconducting tran- sition in electrical resistivity about 12 K, by using pulsed laser deposition method. The electrical transport measurements of the thin film were studied with magnetic fields up to 12.0 T. Thermally activated energy was analyzed using simple conventional Ar- rhenius relation and more precise relation which was closer to experimental results. Besides, the vortex glass transition tempera- tures, the upper critical magnetic field, and the coherent length for the FeSe0.4Te0.6 thin film were studied.

关 键 词：薄膜 超导电性 电输运 热激活能 

分 类 号：O511[理学—低温物理]