新颖半导体二硫化钼  

Novel Semiconductor Materials Molybdenite

作　　者：袁明文[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2013年第3期212-215,共4页Semiconductor Technology

摘　　要：描述了一种新颖的、单层厚度0.65 nm并具有直接带隙约为1.8 eV的半导体材料———二硫化钼(MoS2)的研究现状。过渡金属二硫化物半导体MoS2具有电气、光学和催化剂性质以及重要的干润滑性能,具有薄而透明性质的单层MoS2半导体还将辅助石墨烯的应用,如:光电子学和能量储存。主要介绍了材料的半导体性质、半导体器件的实验样品———金属半导体场效应晶体管及其器件结构、特性表征。最后,还指出相关材料和器件研究所面临的挑战,例如:如何获得低成本制备批量的材料、材料掺杂、原理分析以及工艺途径等。The research status of a novel semiconductor layer molybdenite with only 0. 65 nm thickness, which is molybdenite material is described, i. e, singlea semiconductor with direct bandgap of about 1.8 eV. The transition-metal dichalcogenide semiconductor MoS2 has attracted great interest because of its distinctive electronic, optical, and catalytic properties, as well as its importance for dry lubrication. Monolayer MoS2 could also complememt graphene in applications that requires thin transparent semicondctor, such as optoelectronics and energy harvesting. The molybdenite material properties of semiconductor, a sample of schematic MESFET and its characterization are also introduced. Finally, the challenges which the relevant materials and devices facing are pointed out, such as, how to get low cost manufacturing batch material, material doping, the principle analysis and process approach, etc.

关 键 词：二硫化钼 半导体 材料 表征 电子器件 

分 类 号：TN304.2[电子电信—物理电子学]