溶胶凝胶制备氧化钒薄膜的生长机理及光电特性  

Growth mechanism and optoelectronic properties of vanadium oxide films prepared by Sol-Gel

作　　者：何琼[1] 许向东[1] 温粤江[1] 蒋亚东[1] 敖天宏[1] 樊泰君[1] 黄龙[1] 马春前[1] 孙自强[1] 

机构地区：[1]电子科技大学光电信息学院,电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《物理学报》2013年第5期329-335,共7页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:61071032)资助的课题~~

摘　　要：采用溶胶凝胶法,在不同的退火温度下制备了不同的氧化钒薄膜.利用扫描电子显微镜、X射线衍射仪、高阻仪、紫外-可见分光光度计和傅里叶红外光谱仪等,对薄膜的形貌、晶态、电学和光学特性进行了分析.结果表明,溶胶凝胶法获取V2O5薄膜的最佳退火温度为430℃,低于此温度不利于使有机溶剂充分分解,高于此温度则V—O键发生裂解、形成更多的低价态氧化钒.本文制备的氧化钒薄膜具有较高的电阻温度系数和光吸收率,适合应用在非制冷红外探测器中.本文揭示了溶胶凝胶法制备氧化钒薄膜的生长机理.Vanadium oxide films are prepared by Sol-Gel at different annealing temperatures. Their surface morphologies, valence states, electrical and optical properties are characterized by SEM, XRD, resistance meter, UV-Vis spectrometer and FTIR, respectively. Re- suits reveal that the optimal temperature for producing V205 films by Sol-gel is 430 ℃, the organics in the films cannot be decomposed completely below 430 ℃while the V-O bonds will be broken under a higher temperature （〉 430 ℃）. The as-prepared vanadium pen- toxide films exhibit higher TCR and larger light absorption, so that they are suitable to be used as bolometric materials for uncooled infrared detectors. The growth mechanism of vanadium oxide film prepared by Sol-Gel is also presented in this paper.

关 键 词：氧化钒薄膜 溶胶凝胶 光电特性 生长机理 

分 类 号：O484[理学—固体物理]