Ti_3SiC_2的生长机制  

Growth mechanism of Ti_3SiC_2

作　　者：张俊才[1] 史延田 

机构地区：[1]黑龙江科技学院材料科学与工程学院,哈尔滨150027 [2]黑龙江省建筑材料工业规划设计研究院,哈尔滨150010

出　　处：《黑龙江科技学院学报》2013年第1期39-42,共4页Journal of Heilongjiang Institute of Science and Technology

摘　　要：为探讨Ti3SiC2的生长机制,以Ti、Si、C元素粉末为原料,采用三种不同的真空烧结工艺,制备体积分数为89.12%、85.90%及93.01%的Ti3SiC2材料,并利用XRD和SEM对其进行组织结构分析。结果表明:Ti3SiC2晶体生长为台阶机制,在母层片的法线方向不受约束的情况下形成梯田形貌;在生长母层面的法线方向受到约束的情况下,Ti3SiC2的生长台阶被逐渐填满,形成晶型较完整的Ti3SiC2;在以Ti、Si、C粉末为原料制备Ti3SiC2时,在略高于1 300℃的温度进行长时间保温是有利的。Aimed at investigating the growth mechanism of Ti3SiC2 , this paper discusses the preparation of materials with a volume fraction of Ti3SiC2 up to 89. 12% ,85.90%, and 93.01% respectively,using Ti, Si, C element mixed powders as crude materials and employing three kinds of vacuum sintering technology, and presents an analysis of organized structure of prepared Ti3SiC2 material by XRD and SEM. Research result shows that, in the presence of restraint on normal direction of mother-layer-flat, Ti3SiC2 growing up on steps mechanism tends to develop into micrographs like terraced field; in the absence of restraint on normal direction of mother-layer-flat, the growth steps of Ti3SiC2 tend to be filled up gradually, resulting in a well-developed crystal structure of Ti3 SiC2 ; keeping warm for a long time at the temperature slightly higher than 1 300 ℃ contributes to preparing Ti3SiC2 from Ti, Si and C powders taken as raw materials.

关 键 词：TI3SIC2 真空烧结 生长机制 

分 类 号：O641[理学—物理化学]