含增益缺陷层的1维三元光子晶体特性研究  

Study on characteristics of 1-D ternary photonic crystal containing gain medium defect layer

作　　者：高雯婧[1] 梁良[1] 

机构地区：[1]西安建筑科技大学物理系,西安710055

出　　处：《激光技术》2013年第2期147-150,共4页Laser Technology

摘　　要：为了设计出具有特殊光学特性的晶体,在不考虑色散的基础上,采用传输矩阵法对缺陷层为增益介质的1维三元光子晶体的光学特性进行了理论分析和数值模拟,主要研究了在0.242μm处能获得最大光放大时所对应的增益介质的厚度及光学常数,并讨论了当中心波长变化时的光放大特点。结果表明,当中心波长为0.3μm时,中心波长两侧存在着对应的禁带,改变缺陷层厚度及光学常数对该带隙结构的影响很小;但通带边0.242μm波长处获得很强的光放大。这一结果为今后获得具有所需特征缺陷的光子晶体提供了理论指导。In order to design a crystal with special optical characteristics, the characteristics of 1-D ternary photonic crystal containing gain medium defects layer was studied with transfer matrix method without considering dispersion relation, and its band structure and optical amplification characteristics were analyzed and discussed. There is strong optical amplification in the passband edge 0. 242μm. The thickness and optical constants of the gain medium at 0. 242μm was studied, and the characteristics of the optical amplification were discussed when changing the central wavelength of light. The results indicate that there is corresponding forbidden band on the both sides of center wavelength when the center wavelength is 0. 3 μm. The influence of the band gap structures is small when changing the thickness and optical constants of the defect layer, and there is strong optical amplificatiom in passband edge 0. 242μm. This simulated data provides a theoretical guidance for photonic crystal of the desired characteristics.

关 键 词：材料 光子晶体 传输矩阵法 缺陷层 增益介质 光放大 

分 类 号：O734[理学—晶体学]