铟掺杂PZT铁电陶瓷性能研究  

Study of In-doping on the ferroelectric properties of PZT piezoelectric ceramics

作　　者：朱斌[1] 文忠[1] 高扬[1] 杨涛[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《功能材料》2013年第5期614-617,共4页Journal of Functional Materials

基　　金：国家重点基础研究发展计划(973计划)资助项目(51310Z02)

摘　　要：采用传统固相烧结法制备In2O3掺杂的锆钛酸铅(PZT)铁电陶瓷,研究了In2O3掺杂量对PZT铁电陶瓷材料的相组成、微观结构、介电性能、压电性能及铁电性能的影响。研究结果表明,随着In2O3掺杂量的增加,PZT材料在准同型相界处三方相增加四方相减少,适量掺入In2O3有利于晶粒均匀生长。在不同的铟掺杂剂量下,PZT陶瓷材料分别具有最佳的铁电及压电性能。当铟掺杂量为0.1%(质量分数)时,PZT材料具有最佳的铁电性能,其剩余极化强度为23.43μC/cm2,矫顽场为9.783kV/cm。当铟掺杂量为0.3%(质量分数)时,PZT材料具有最好的压电性能,其tanδ=0.023,d33=540pC/N,εr=1513,Kp=0.764,Qm=1819。Pb（Zrx Ti1-x）03 （PZT） piezoelectric ceramics doped with In2 03 were studied. X-ray diffraction, scan- ning electron microscopy, LC2000 ferroelectric tester were used to study the effect of phase of ceramics, micro- structure and ferroelectric properties. The results showed that the grain size of the PZT ceramics doped with proper amount of In203 was inhibited and homogenized, with the increasing amount of doping, the material with the phase boundary was reduced in the quasi-three-phase and increased in tetragonal. When the amount of In2 03 was 0. lwt%, the PZT ceramics presented most optimal ferroelectric properties： Pr =23.43μC/cm^2 , Ec =9. 783kV/cm. When the amount of In203 was 0.3wt%, the PZT ceramics presented most optimal piezoelec- tric properties： tanδ=0.023,d33=540pc/N,εr=1513,Kp=0.764,Qm=1819.

关 键 词：PZT 陶瓷 In2O3掺杂 压电 铁电 

分 类 号：TM282[一般工业技术—材料科学与工程]