USP制备高光电活性Ti掺杂Fe_2O_3薄膜  

Highly photoelectric performance of Ti doped hematite thin films prepared by USP

作　　者：刘尚军[1] 杨鑫[1] 练小娟[1] 续颖[1] 田晶[1] 王瑞林[1] 

机构地区：[1]四川大学材料科学与工程学院,四川成都610065

出　　处：《化学研究与应用》2013年第3期328-332,共5页Chemical Research and Application

基　　金：科技部863项目(2006AA05Z102)资助;教育部科技创新工程重大项目培育资金项目(707050)资助;成都市科技局攻关计划项目(10GGYB380GX-023;10GGYB828GX-023)资助

摘　　要：本文报道了采用超声喷雾裂解法(USP)法制备α-Fe2O3以及不同厚度的Ti掺杂α-Fe2O3薄膜,并通过XRD、XPS、SEM、IPCE表征了合成的薄膜。XRD测试结果表明,Ti掺杂和纯相Fe2O3均为α相并在(110)晶面优先生长;从AFM图中看出Fe2O3晶粒呈尖峰状垂直于平面排列;由XPS分析得知Ti离子在Fe2O3薄膜中以Ti4+和Ti3+两个价态存在;由光电效率表征可知,吸收光电转换效率(APCE)值是随着样品薄膜厚度增加而减小,在厚度为20nm时APCE为58%,对于粉末Fe2O3光催化材料是粒径尺寸越小光利用率越高;然而Fe2O3薄膜的IPCE值在厚度为60nm时最高达到23.5%,此时光利用效率最大。Ti doped Fe2O3 thin films with different thickness were prepared by ultrasonic spray pyrolysis method. XRD, XPS, SEM and IPCE were used to characterize films. The results indicated that the film showed rhombohedral system, and there was a preferen- tial orientation of（110） direction. The peak like crystal grain grew vertically along the surface, with a height about 45nm. Ti atoms existed in the form of Ti＋＋ and Ti3＋ analyzed by XPS. absorbed photon to current efficiencies（APCE） decreased with the film thick- ness increasing. When the film thickness reached 20 nm, APCE was 58%, with regard to Fe2O3powder, the utilization of light be- came large with the grain size decreasing. However for theFe2O3 film, it showed the best IPCE when the film thickness was 60 nm.

关 键 词：USP FE2O3 厚度 光催化 IPCE 

分 类 号：O611.62[理学—无机化学]