VSe_2薄膜的光电性质及背接触特性的研究  

Optoelectrical Properties and Back Contact Characteristic of VSe_2 Thin Films

作　　者：杨镓溢[1] 高静静[1] 王文武[1] 曾广根[1] 李卫[1] 冯良桓[1] 张静全[1] 武丽丽[1] 黎兵[1] 

机构地区：[1]四川大学材料科学与工程学院,成都610064

出　　处：《无机材料学报》2013年第3期312-316,共5页Journal of Inorganic Materials

基　　金：国家重点基础研究发展计划(2011CBA007008);国家自然科学基金(61076058)~~

摘　　要：采用电子束蒸发法制备VSe2薄膜并进行退火处理,通过XRD、SEM、透过谱、Hall效应、电导率–温度关系等表征了薄膜的结构、形貌、光学和电学性质,用半导体特性测试仪研究了VSe2薄膜的背接触特性。结果表明:VSe2薄膜在一定的退火温度下结晶并呈稳定的六方相,VSe2薄膜为p型直接禁带跃迁材料,光能隙约2.35 eV。将VSe2作为背接触层应用于CdTe多晶薄膜太阳电池,消除了roll-over现象,有效提高了器件性能。VSe2 thin films were prepared by using electron beam evaporation method and subsequently annealed at different temperatures. The structural, morphological, optical and electrical properties of VSez thin films were characterized by XRD, SEM, optical transmission spectra, Hall coefficients and in situ conductivity measurements. And the back contact characteristic of CdTe solar cells with VSeE was investigated by dark J-V measurements. The results show that the films are crystallized in a stable hexagonal phase after annealing. The direct optical band gap value Eg for the films, showing p-type conduction mechanism, is found to be about 2.35 eV. The roll-over phenomenon in CdTe solar cells is eliminated and the device performance effectively improves when VSe2 is used as a back contact.

关 键 词：背接触 VSe2薄膜 CdTe薄膜太阳电池 

分 类 号：TM910[电气工程—电力电子与电力传动]