含Eu络合物掺杂的PMMA光致发光薄膜的制备与表征  

Preparation and Characterization of Photoluminescent PMMA Film Doped with Eu Complex

作　　者：易松[1,2] 杨永兵[2] 杨廷海[2] 李锦春[1] 陈强[1,2,3] 

机构地区：[1]常州大学材料科学与工程学院,常州213164 [2]南京大学常州高新技术研究院,常州213164 [3]南京大学化学化工学院,南京210093

出　　处：《材料导报》2013年第4期86-89,共4页Materials Reports

基　　金：常州市科技攻关计划(CE20110011);常州市应用基础研究计划(CJ2011014);江苏省前瞻性研究计划(BY2009122)

摘　　要：制备了稀土Eu3+与4-甲氧基二苯甲酰甲烷(4-methoxy-dibenzoylmethane,MDBM)、邻菲罗啉(Phenan-throline,Phen)的络合物Eu(MDBM)3(Phen)x,并通过IR、UV、FS(荧光光谱)对其进行了表征。将Eu(MDBM)3-(Phen)x掺杂到聚甲基丙烯酸甲酯(PMMA)中,得到了光致发光PMMA薄膜。研究结果表明,该薄膜具有较好的光致发光性能,主要荧光激发峰位于380nm,主要荧光发射峰位于613nm,络合物Eu(MDBM)3(Phen)x掺杂量从0.8%增加到1.2%时,薄膜的荧光发射强度呈持续增强趋势,在613nm波长处发射强度增强了13倍。A complex Eu（MDBM）3 （Phen）x was prepared with Eu3＋, 4-methoxy-dibenzoylmethane（MDBM） and phenanthroline（Phen）,and characterized by IR, UV and FS（fluorescence spectroscopy）. The complex was doped into polymethyl methacrylate（PMMA） in order to obtain photoluminescent PMMA film. The result shows that this film had pretty good photoluminescent property. Its main fluorescence excitation peak was at 380 nm, main fluores cence emission peak was at 613 nm. While the doping amount of Eu（MDBM）a （Phen）x, increased from 0.8% to 1.2%, the fluorescence emission intensity of this PMMA film increased continuously, and the fluorescence emission intensity at 613 nm increased 13 times.

关 键 词：光致发光 稀土 薄膜 

分 类 号：TQ325.7[化学工程—合成树脂塑料工业]