两步还原法制备导电石墨烯薄膜  

Preparaiton of Conductive Graphene Film by Two-step Reduction Method

作　　者：赵南[1] 赵登祥[2] 杨娟[1] 韩国琪[2] 王超志[2] 

机构地区：[1]江苏大学材料科学与工程学院,镇江212013 [2]江苏大学京江学院,镇江212013

出　　处：《材料导报》2013年第6期8-11,共4页Materials Reports

基　　金：国家自然科学基金(50902061);江苏省六大人才高峰项目(D类)资助项目(2009137);江苏省2012年度普通高校研究生科研创新计划项目(CXZZ12_0670);2011年江苏省高等学校大学生实践创新训练计划和江苏大学第十批学生科研立项(Y10A056)

摘　　要：通过两步还原法制备了导电石墨烯薄膜。采用XPS、Raman等表征了薄膜的结构;采用四探针电阻仪表征了薄膜电学性能。结果表明:用两步法制备的石墨烯薄膜具有更高的还原程度,其碳和氧的原子比达8.9∶1;薄膜的方块电阻为0.42kΩ/□,而同等厚度的一次还原薄膜的方块电阻为5.57kΩ/□。The grahene film with high electrical conductivity was fabricated via two-step reduction method. The structure of the films were studied by means of XPS, Raman, and the electrical property was investigated by four probe resistance measurement instrument. The results show that graphene film fabricated through the two-step reduction method has higher reduction degree than that only reduced by hydrazine hydrate. The atomic ratio of C to O in the graphene film is 8. 9. The sheet resistance of graphene film is 0.42 kΩ/□, which is much lower than that of the film reduced by hydrazine hydrate with the same thickness （5.57 kΩ/□）.

关 键 词：石墨烯薄膜 水均分散性 二次还原 电学性能 

分 类 号：TB43[一般工业技术]