高方阻密栅电池发射结方阻的优化  

Optimum Design of High Sheet Resistance Dense Grid Cell Emitter Resistance

作　　者：高华[1] 黄其煜[1] 

机构地区：[1]上海交通大学微电子学院,上海201406

出　　处：《光电技术应用》2013年第1期18-24,共7页Electro-Optic Technology Application

基　　金："上海市闵行区校企合作技术创新专项"(#2011MH060)支持

摘　　要：主要介绍了晶体硅太阳电池光电转换效率的工艺优化,特别是对高发射结方阻方面,以及后道工序中如何使之适应高方阻工艺。在高方阻方面主要采用了深结高方阻,这主要是从工艺稳定性方面考虑。通过一系列工艺的优化及大量实验,获得了高达635 mV的开路电压,5.817 A的短路电流,均值18.67%的电池效率。Technology optimization of electro-optical conversion efficiency of crystalline silicon solar cell is introduced. High emitter sheet resistance and how to adapt to the technology of high sheet resistance in follow- ing procedures are introduced especially. Considering of technology stability, the method of deep PN junction high sheet resistance is mainly used on the area of high sheet resistance. The open circuit voltage of 635 mV, the short circuit current of 5.817 A and the average cell efficiency of 18.67% have been achieved through a series of technology optimizations and a lot of experiments.

关 键 词：高方阻发射结 晶体硅电池 转换效率 

分 类 号：TM911.11[电气工程—电力电子与电力传动]