PLD法制备NiO薄膜及结构和形貌的研究  

Growth of NiO thin films by PLD and their structure and morphology

作　　者：汪礼柱[1] 梁金[1] 何晓雄[1] 梁齐[1] 

机构地区：[1]合肥工业大学电子科学与应用物理学院,安徽合肥230009

出　　处：《真空》2013年第2期22-26,共5页Vacuum

基　　金：安徽省自然科学基金(11040606M63)

摘　　要：利用脉冲激光沉积法(PLD)在Si衬底上制备NiO薄膜,利用X射线衍射(XRD)和原子力显微镜(AFM)对所制备薄膜的晶体结构和表面形貌进行表征分析,研究衬底温度和脉冲激光能量对NiO薄膜结构和形貌的影响,得到生长质量较高、择优取向的多晶NiO薄膜的一种最佳制备条件。制备了p-NiO/n-Si异质结器件,I-V特性测试表明,器件具有良好的整流特性。NiO thin films were prepared on Si substrates by pulsed laser deposition （PLD）. The crystalline structure and suface morphology of the films were characterized by XRD and AFM. Influnce of the substrate temperature and pulsed laser energy on the structure and morphology of the films were investigated. The optimum preparation parameters were obtained for growth of polycrystalline NiO thin films with high quality and preferred orientation. The p-NiO/n-Si heterojunction device was fabricated and its I-V curve showed a good rectifying characteristic.

关 键 词：NiO薄膜 脉冲激光沉积(PLD) 结构 形貌 

分 类 号：TN304.2[电子电信—物理电子学] O484[理学—固体物理]