阳极氧化电压对TiO_2纳米管阵列生长及场发射性能的影响  

Fabrication and Field Emission Characteristics of TiO_2 Nano-Tube Arrays

作　　者：洪春燕[1] 叶芸[1] 郭凡[1] 颜敏[1] 蒋亚东[2] 郭太良[1] 

机构地区：[1]福州大学物理与信息工程学院,福州350002 [2]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《真空科学与技术学报》2013年第2期141-145,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金项目(61106053);教育部博士点博导基金项目(20103514110007);电子薄膜与集成器件国家重点实验室开放课题(KFJJ200916)

摘　　要：室温下在HF水溶液中,利用阳极氧化法在纯钛表面制备了规则有序的TiO2纳米管阵列,应用场致发射扫描电子显微镜、X射线光电子能谱对纳米管阵列表面形貌、断面结构及元素组成进行表征,并对所得样片的场发射性能进行测试,研究了阳极氧化电压对TiO2纳米管阵列形貌及场发射性能的影响。结果表明:在一定范围内增大氧化电压,可增大纳米管的管径、壁厚和管长,但壁厚变化比较小。随着氧化电压的增大,开启场强先降低后增大。当氧化电压为10V时,所获得的TiO2纳米管阵列开启场强最低,为3.15 V/μm,在6 h内8 V/μm电场下保持了稳定的场发射,电流密度为0.85 mA/cm2。TiO2 nanotttbe arrays were fabricated by anodic oxidation of pure Ti plate in the HF solution. The impacts of the growth conditions on the microstructures and field emission characteristics of the TiO2 nanotube arrays were evaluat- ed. The arrays were characterized with field emission scanning electron microscopy and X-ray photoelectron spectroscopy. The results show that the anodization voltage strongly affects the microstructures and emission properties of the TiO2 nano- tube arrays. For example, as the anodization voltage increased, its emission on-set voltage varied in a decrease-increase mode; and the tube diameter and length increased with little change in its wall thickness. The arrays, anodized at 10 V, were found to have the lowest onset field,3.15 V/μm;and an emission current density of 0.85 mA/cm2,when biased at 8 V/μm. Moreover,high emission stability for at least 6 h was observed.

关 键 词：阳极氧化 TIO2纳米管阵列 场发射 开启场强 

分 类 号：O462.4[理学—电子物理学]