Effect of anchor and functional groups in functionalized graphene devices  

作　　者：Elvira Pembroke Gedeng Ruan Alexander Sinitskii David A. Corley Zheng Yan Zhengzong Sun James M. Tour 

机构地区：[1]Departments of Chemistry, Rice University, MS 222, 6100 Main Street, Houston, Texas 77005, USA [2]Computer Science, Mechanical Engineering and Materials Science, and the Smalley Institute for Nanoscale Science and Technology, Rice University, MS 222, 6100 Main Street, Houston, Texas 77005, USA

出　　处：《Nano Research》2013年第2期138-148,共11页纳米研究（英文版）

摘　　要：The electrical properties of chemically derived graphene and graphene grown by chemical vapor deposition （CVD）, until now, have been inferior to those of mechanically exfoliated graphene. However, because graphene is easier to produce in large quantities through CVD or growth from solid carbon sources, it has a higher potential for use in future electronics applications. Generally, modifications to the pristine lattice structure of graphene tend to adversely affect the electrical properties by shifting the doping level and changing the conductivity and the mobility. Here we show that a small degree of graphene surface functionalization, using diazonium salts with electron-withdrawing and electron-donating functional groups, is sufficient to predominantly induce p-type doping, undiminished mobility, and higher conductivity at the neutrality point. Molecules without a diazonium anchor group desorb easily and do not have a significant effect on the electronic properties of graphene devices. We further demonstrate the variability between identically fabricated pristine devices, thereby underscoring the caution needed when characterizing graphene device behaviors lest conclusions be drawn based on singular extremes.

关 键 词：chemical vapor deposition GRAPHENE diazonium functionali zation neutrality point 

分 类 号：TN470.597[电子电信—微电子学与固体电子学] O621.3[理学—有机化学]