The design and manufacture of a notch structure for a planar InP Gunn diode  

作　　者：白阳 贾锐 武德起 金智 刘新宇 

机构地区：[1]Institute of Microelectronics,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2013年第2期415-418,共4页中国物理B（英文版）

基　　金：Project supported by the Main Direction Program of Knowledge Innovation of the Chinese Academy of Sciences (Grant No. 2A2011YYYJ-1123)

摘　　要：A planar InP-based Gunn diode with a notch doping structure is designed and fabricated for integration into millimeter-wave and terahertz integrated circuits.We design two kinds of InP-based Gunn diodes.One has a fixed diameter of cathode area,but has variable spacing between anode and cathode;the other has fixed spacing,but a varying diameter.The threshold voltage and saturated current exhibit their strong dependences on the spacing（10 μm-20 μm） and diameter（40 μm-60 μm） of the InP Gunn diode.The threshold voltage is approximately 4.5 V and the saturated current is in a range of 293 mA-397 mA.In this work,the diameter of the diode and the space between anode and cathode are optimized.The devices are fabricated using a wet etching technique and show excellent performances.The results strongly suggest that low-cost and reliable InP planar Gunn diodes can be used as single chip terahertz sources.A planar InP-based Gunn diode with a notch doping structure is designed and fabricated for integration into millimeter-wave and terahertz integrated circuits.We design two kinds of InP-based Gunn diodes.One has a fixed diameter of cathode area,but has variable spacing between anode and cathode;the other has fixed spacing,but a varying diameter.The threshold voltage and saturated current exhibit their strong dependences on the spacing（10 μm-20 μm） and diameter（40 μm-60 μm） of the InP Gunn diode.The threshold voltage is approximately 4.5 V and the saturated current is in a range of 293 mA-397 mA.In this work,the diameter of the diode and the space between anode and cathode are optimized.The devices are fabricated using a wet etching technique and show excellent performances.The results strongly suggest that low-cost and reliable InP planar Gunn diodes can be used as single chip terahertz sources.

关 键 词：InP Gunn device millimeter generation planar Gunn diode 

分 类 号：TN31[电子电信—物理电子学]