Low driving voltage in an organic light-emitting diode using MoO_3/NPB multiple quantum well structure in a hole transport layer  

作　　者：穆雪 吴晓明 华玉林 焦志强 申利莹 苏跃举 白娟娟 毕文涛 印寿根 郑加金 

机构地区：[1]School of Materials Science and Engineering,Key Laboratory of Display Materials and Photoelectric Devices,Ministry of Education, Tianjin Key Laboratory of Photoelectric Materials and Devices,Tianjin University of Technology [2]College of Optoelectronics Engineering,Nanjing University of Posts and Telecommunications

出　　处：《Chinese Physics B》2013年第2期511-514,共4页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos. 60906022 and 60676051);the Natural Science Foundation of Tianjin,China (Grant No. 10JCYBJC01100);the Scientific Developing Foundation of Tianjin Education Commission,China (Grant No. 2011ZD02);the Jiangsu Natural Science Development Foundation for University,China (Grant No. 09KJB140006)

摘　　要：The driving voltage of an organic light-emitting diode（OLED） is lowered by employing molybdenum trioxide（MoO3）/N,N＇-bis（naphthalene-1-yl）-N,N＇-bis（phe-nyl）-benzidine（NPB） multiple quantum well（MQW） structure in the hole transport layer.For the device with double quantum well（DQW） structure of ITO/[MoO3（2.5 nm）/NPB（20 nm）]2/Alq3（50 nm）/LiF（0.8 nm）/Al（120 nm）],the turn-on voltage is reduced to 2.8 V,which is lowered by 0.4 V compared with that of the control device（without MQW structures）,and the driving voltage is 5.6 V,which is reduced by 1 V compared with that of the control device at the 1000 cd/m2.In this work,the enhancement of the injection and transport ability for holes could reduce the driving voltage for the device with MQW structure,which is attributed not only to the reduced energy barrier between ITO and NPB,but also to the forming charge transfer complex between MoO3 and NPB induced by the interfacial doping effect of MoO3.The driving voltage of an organic light-emitting diode（OLED） is lowered by employing molybdenum trioxide（MoO3）/N,N＇-bis（naphthalene-1-yl）-N,N＇-bis（phe-nyl）-benzidine（NPB） multiple quantum well（MQW） structure in the hole transport layer.For the device with double quantum well（DQW） structure of ITO/[MoO3（2.5 nm）/NPB（20 nm）]2/Alq3（50 nm）/LiF（0.8 nm）/Al（120 nm）],the turn-on voltage is reduced to 2.8 V,which is lowered by 0.4 V compared with that of the control device（without MQW structures）,and the driving voltage is 5.6 V,which is reduced by 1 V compared with that of the control device at the 1000 cd/m2.In this work,the enhancement of the injection and transport ability for holes could reduce the driving voltage for the device with MQW structure,which is attributed not only to the reduced energy barrier between ITO and NPB,but also to the forming charge transfer complex between MoO3 and NPB induced by the interfacial doping effect of MoO3.

关 键 词：organic light-emitting devices low driving voltage multiple quantum wells charge transfer complex 

分 类 号：TN312.8[电子电信—物理电子学]