The effect of substrate doping on the flatband and threshold voltages of a strained-Si pMOSFET  

作　　者：王斌 张鹤鸣 胡辉勇 张玉明 周春宇 王冠宇 李妤晨 

机构地区：[1]Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University

出　　处：《Chinese Physics B》2013年第2期539-544,共6页中国物理B（英文版）

基　　金：Project supported by the Funds from the National Ministries and Commissions (Grant Nos. 51308040203 and 6139801);the Fundamental Research Funds for the Central Universities (Grant Nos. 72105499 and 72104089);the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2010JQ8008)

摘　　要：The effect of substrate doping on the flatband and threshold voltages of a strained-Si/SiGe p metal-oxide semiconductor field-effect transistor（pMOSFET） has been studied.By physically deriving the models of the flatband and threshold voltages,which have been validated by numerical simulation and experimental data,the shift in the plateau from the inversion region to the accumulation region as the substrate doping increases has been explained.The proposed model can provide a valuable reference to the designers of strained-Si devices and has been implemented in software for extracting the parameters of a strained-Si MOSFET.The effect of substrate doping on the flatband and threshold voltages of a strained-Si/SiGe p metal-oxide semiconductor field-effect transistor（pMOSFET） has been studied.By physically deriving the models of the flatband and threshold voltages,which have been validated by numerical simulation and experimental data,the shift in the plateau from the inversion region to the accumulation region as the substrate doping increases has been explained.The proposed model can provide a valuable reference to the designers of strained-Si devices and has been implemented in software for extracting the parameters of a strained-Si MOSFET.

关 键 词：strained-Si pMOSFET flatband voltage threshold voltage DOPING 

分 类 号：TN386[电子电信—物理电子学]