Comparative investigation of the resistance and ability to trigger high voltage discharge for single and multiple femtosecond filaments in air  

作　　者：郭凯敏 郝作强 林景全 孙长凯 高勋 赵振明 

机构地区：[1]School of Science,Changchun University of Science and Technology [2]School of Physical Science and Technology,Baotou Teachers College

出　　处：《Chinese Physics B》2013年第3期372-374,共3页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos. 11074027,60978014,61178022,11274053,and 11211120156);the Funds from Sci. & Tech. Deparment of Jilin Province,China (Grant No. 20111812)

摘　　要：A comparative investigation of the resistance and ability to trigger high voltage（HV） discharge for a single filament（SF） and multiple filaments（MFs） has been carried out.The experimental results show that the trend of the breakdown threshold of the SF exactly follows that of its resistance,but this is not the case for the MF.The MF＇s resistance is much smaller than the SF＇s.However,the MF shows a slightly higher HV breakdown threshold than the SF.The underlying physics is that the measured resistance of the MF is collectively contributed by every filament in the MF while the HV breakdown threshold is determined by only one single discharging path.A comparative investigation of the resistance and ability to trigger high voltage（HV） discharge for a single filament（SF） and multiple filaments（MFs） has been carried out.The experimental results show that the trend of the breakdown threshold of the SF exactly follows that of its resistance,but this is not the case for the MF.The MF＇s resistance is much smaller than the SF＇s.However,the MF shows a slightly higher HV breakdown threshold than the SF.The underlying physics is that the measured resistance of the MF is collectively contributed by every filament in the MF while the HV breakdown threshold is determined by only one single discharging path.

关 键 词：femtosecond filament RESISTANCE high voltage breakdown threshold 

分 类 号：O461[理学—电子物理学]