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机构地区:[1]State Key Laboratory of High Performance Computing,National University of Defense Technology [2]School of Computer,National University of Defense Technology
出 处:《Chinese Physics B》2013年第3期522-527,共6页中国物理B(英文版)
基 金:Project supported by the National Natural Science Foundation of China (Grant No. 60921062)
摘 要:With the progress of the semiconductor industry,the resistive random-access memory(RAM) has drawn increasing attention.The discovery of the memristor has brought much attention to this study.Research has focused on the resistive switching characteristics of different materials and the analysis of resistive switching mechanisms.We discuss the resistive switching mechanisms of different materials in this paper and analyze the differences of those mechanisms from the view point of circuitry to establish their respective circuit models.Finally,simulations are presented.We give the prospect of using different materials in resistive RAM on account of their resistive switching mechanisms,which are applied to explain their resistive switchings.With the progress of the semiconductor industry,the resistive random-access memory(RAM) has drawn increasing attention.The discovery of the memristor has brought much attention to this study.Research has focused on the resistive switching characteristics of different materials and the analysis of resistive switching mechanisms.We discuss the resistive switching mechanisms of different materials in this paper and analyze the differences of those mechanisms from the view point of circuitry to establish their respective circuit models.Finally,simulations are presented.We give the prospect of using different materials in resistive RAM on account of their resistive switching mechanisms,which are applied to explain their resistive switchings.
关 键 词:resistive random-access memory resistive switching mechanism circuit model
分 类 号:TP333.8[自动化与计算机技术—计算机系统结构]
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