掺Ga高效单晶硅太阳电池抑制光衰研究  

STUDY ON SUPPRESSING LIGHT DEGRADATION IN Ga-DOPED HIGH-EFFICIENCY SINGLE CRYSTAL SILICON SOLAR CELL

作　　者：任丽[1] 李宁[2] 杨淑云[2] 丰云恺[1] 任丙彦[2] 

机构地区：[1]河北工业大学化工学院,天津300130 [2]河北工业大学信息功能材料研究所,天津300130

出　　处：《太阳能学报》2013年第3期449-452,共4页Acta Energiae Solaris Sinica

基　　金：国家高技术研究发展(863)计划(2012AA05031);河北省自然科学基金(F2012202090)

摘　　要：P型掺B单晶硅制作的太阳电池光照10h后产生3％～6％的效率衰减。该文制备常规掺B和不同掺Ga剂量的P〈100〉单晶硅并切片制备高效晶硅太阳电池，对硅片物理参数和电池光伏特性参数进行测试对比分析。用标准模拟光源对样品电池分别进行光衰实验对比，结果证实：掺Ga单晶硅太阳电池不仅能保持与掺B单晶电池相同的光电转换效率，而且能强烈地抑制光衰。There will be a 3%-6% efficiency degradation of in high-efficiency solar cell with using conventially B dopped P 〈 100 〉 single crystal silicon wafer under 10 hours illumination. A series of Ga doped c-Si are prepared by our patent technology. The life-time of the wafer on bottom part of the crystal-rod is smaller than the top part one, while it can get higher efficiency and low light degeadation. Solar cell silicon with Ga-doped e-Si can not only keep the same conversion efficiency as tbe conventially B-doped e-Si wafer, but also suppress light degradation intensively.

关 键 词：掺Ga 单晶硅 太阳电池 光衰 

分 类 号：TB321[一般工业技术—材料科学与工程]