852nm半导体激光器量子阱设计与外延生长  

Design and epitaxial growth of quantum-well for 852 nm laser diode

作　　者：徐华伟[1,2] 宁永强[1] 曾玉刚[1] 张星[1] 秦莉[1] 

机构地区：[1]中国科学院长春光学精密机械与物理研究所发光学及应用国家重点实验室,吉林长春130033 [2]中国科学院大学,北京100049

出　　处：《光学精密工程》2013年第3期590-597,共8页Optics and Precision Engineering

基　　金：国家自然科学基金资助项目(No.11074247;No.61106047;No.61176045;No.61106068;No.51172225;No.61006054);国家自然科学基金重点项目(No.90923037)

摘　　要：设计并外延生长了具有高温度稳定性的InAlGaAs/AlGaAs应变量子阱激光器,用于解决852nm半导体激光器在高温环境下工作时的波长漂移问题。基于理论模型,计算并模拟对比了InAlGaAs,InGaAsP,InGaAs和GaAs量子阱的增益及其增益峰值波长随温度的漂移,结果显示,采用In0.15Al0.11Ga0.74As作为852nm半导体激光器的量子阱可以使器件同时具有较高的增益峰值和良好的波长温漂稳定性。使用金属有机化合物气相淀积(MOCVD)外延生长了In0.15Al0.11Ga0.74As/Al0.3Ga0.7As有源区,通过反射各向异性谱(RAS)在线监测和PL谱研究了InAlGaAs/AlGaAs界面的外延质量,实验证明了通过降低生长温度和在InAlGaAs/AlGaAs界面处使用中断时间,可以有效抑制In析出,从而获得InAlGaAs/AlGaAs陡峭界面。最后,采用优化后的外延生长条件,研制出了InAlGaAs/AlGaAs应变量子阱激光器。实验测试结果显示,其光谱半高宽为1.1nm,斜率效率为0.64W/A,激射波长随温度漂移为0.256nm/K。理论计算结果与实验测试结果相吻合,证明器件性能满足在高温环境下工作的要求。An InA1GaAs/AIGaAs strained quantum-well laser with high temperature stability was de- signed and grown to overcome the emission wavelength shift occurred in high temperature for a 852 nm laser diode. Based on a comprehensive model, the gains and wavelengths versus the operation tem- peratures of InA1GaAs, InGaAsP, InGaAs and GaAs quantum-wells were calculated and compared. The results indicate that Ino, ls A10.11 Ga0.74 As quantum-well is the most appropriate candidate for the quantum well of the 852 nm laser diode with the higher gain and better temperature stability simulta- neously. Then, Metal-organic Chemical Vapor Deposition（MOCVD） was used to grow compressive- strained In0.15 Al0.,1 Ga0.74 As/A10.3 Oa0.7 As active region and Reflectance Anisotropy Spectroscopy （RAS） and Photoluminescence Measurements （PL） were applied to the evaluation of crystalline quali- ty for InAIGaAs/A1GaAs interfaces. It is proved that the indium segregation effect can be effectively suppressed by lowering the growth temperature and using the interruption time between InA1GaAs quantum-well and A1GaAs barriers, and an abrupt interface and good crystalline quality for InA1- GaAs/A1GaAs quantum-well can be obtained. Finally, an InA1GaAs/A1GaAs strained quantum-well laser was grown with optimized growth conditions. Experimental results indicate that the laser has a Full Width Half Maximum （FWHM） of 1.1 nm, the slope efficiency of 64 W/A and the wavelength shift with temperature of 0. 256 nm/K. The theoretical calculation results are in good agreement with experimental results, which verifies that the laser meets the work requirements at a high temperature.

关 键 词：半导体激光器 应变量子阱 外延生长 波长漂移 反射各向异性谱 

分 类 号：TN248.4[电子电信—物理电子学]