MBR-RO组合工艺处理半导体废水中RO膜的污染特性研究  

FOULING CHARACTERISTICS OF RO MEMBRANE IN THE SEMICONDUCTOR WASTEWATER RECLAMATION BY USING MBR-RO PROCESS

作　　者：肖燕[1] 陈彤 胡永健 王德山 韩永萍[1,3] 王晓琳[1] 

机构地区：[1]清华大学化学工程系,膜材料与工程北京市重点实验室,100084 [2]北京赛诺水务科技有限公司,100083 [3]北京联合大学生物工程学院,北京100023

出　　处：《水处理技术》2013年第4期53-58,共6页Technology of Water Treatment

基　　金：国家重点基础研究发展规划(973)项目(2009CB623401);国家高技术研究发展计划(863)项目(2012AA03A604);北京市自然科学基金重大项目(2100001)

摘　　要：采用反渗透(RO)深度处理经膜生物反应器(MBR)预处理后的半导体废水。为获得RO长期运行的膜污染特性和清洗对策,处理过程不添加阻垢剂且不采用化学清洗从而加速RO膜污染。膜污染分析表明,RO膜表面污染层的主体物质为疏松堆积的片状无机结垢,未发现明显的微生物群落或有机污染形成的凝胶层。污染层的主要成分为难溶盐BaSO4,其次为SrSO4以及Ca、Si、Al、Mg、Fe和Zn等形成的沉积物,其中Ba、Sr、Ca、Mg和Zn在RO膜元件进口端的含量明显大于出口端。化学清洗结果表明,先采用HCl再采用EDTA-4Na的组合清洗方法,可有效去除RO膜表面的污染层,清洗后RO膜通量可恢复至初始值。A combined MBR-RO system was used to treat a semiconductor wastewater. To understand the fouling characteristics of the RO membrane in long-term operation, the scale inhibitor and chemical cleaning operation were abolished. The fouling analyses show that the dominant foulants of RO membrane are loose inorganic scales with plate-like morphology, while the microorganisms and organics are ignorable. The main component of the fouling layer is BaSO4, and with small amounts of SrSO4 and deposits of Ca, Si, Al, Mg, Fe and Zn. The fouling layer could be effectively removed by the combined chemical cleaning of HCI ＆ EDTA-4Na. After the cleaning, the RO membrane permeability was recovered to the initial level.

关 键 词：半导体废水 回用 MBR RO 污染特性 

分 类 号：TQ028.8[化学工程]