温度冲击下背向集成微透镜阵列红外探测器热应力分析  

Thermal stress analysis of infrared focal plane array detector back-integratedwith microlens array under thermal shock

作　　者：吕克林[1] 张立文[2] 张晓玲[2] 李鹏飞[2] 贵磊[2] 

机构地区：[1]河南省科学技术信息研究院,郑州450003 [2]河南科技大学电子信息工程学院,洛阳471003

出　　处：《激光杂志》2013年第2期12-14,共3页Laser Journal

基　　金：国家自然科学基金青年科学基金(NO:61205090和61107083);河南省重点科技攻关项目(NO:112102210430);河南科技大学青年科学基金项目(No.112102210430)资助

摘　　要：针对温度冲击下红外探测器芯片的高碎裂几率问题,借助ANSYS分析软件,对背向集成微透镜阵列锑化铟探测器热应力随阵列规模的演变规律、以及64×64大面阵探测器热应力及其分布进行了研究。首先针对8×8小面阵背向集成微透镜阵列锑化铟红外探测器进行热应力分析,得到芯片上最大应力值达到最小时探测器的结构参数。以此为探测器典型结构参数,使阵列规模从8×8倍增到64×64,从而在较短的时间内得到温度冲击下探测器中热应力随阵列规模的演变规律,以及64×64探测器的热应力值及其分布。结果表明:背向集成微透镜阵列锑化铟红外探测器最大应力值出现在锑化铟芯片上,并随阵列规模的增大近似呈线性增加,显示出热应力与阵列规模的相关性。在64×64红外探测器中,锑化铟芯片上表面热应力明显集中在微透镜边缘区域,铟柱阵列上表面热应力分布呈现出由外至内的环状梯度分布,而其它接触面上的热应力分布则呈现出明显的均匀性、集中性。The thermal stress and its distribution in 64×64 InSb IRFPAs integrating with microlens arrays are systematically researched by employing finiteelement method, and the changing tendency of thermal stress depdent on mxays tormat is also analyzed, for a small 8× 8InSbb IRFP As with ancrolens arrays is investigated by changing indium bump diameters and height, simulated results show when indimn bump diameter is set to 28μm with height 24/tin, the maximal Von Mires stress in InSb chip reaches minimum. With the above optimal structure, lnSb IRFPAs array scale is doubled once again from 8 × 8 to 64 × 64 to learnVon Mires stl＇eSS in InSb chip reaches minimum. With the above optimal structure, lnSb IRFPAs alTay reale is doubled once again from 8 x 8 to 64 x 64 to learn the thermal stress value versus the arrays format, and the thermal stress value in 64 ~ 64 InSb IRFPAs with microlens ma^ays in short time. Simulation results indicate that the thermal stress maximum appears on InSb chip, which is almost increases linearly with array scale, and strongly determined by arrays fomaat. For 64 × 64 arrays, the thermal stress of InSb chip top surface obviously concentrate on the region around microlens, the themkal stress distribution on the whole top surface of indium bumps shows circle structure from outside to inside, besides, the stress distribution is uniform at other contacting areas between differentmaterials.

关 键 词：红外探测器 微透镜阵列 温度冲击 热应力 

分 类 号：TN215[电子电信—物理电子学]