高倍聚光GaInP/InGaAs/Ge三结太阳电池研究  

Research of GaInP/InGaAs/Ge Triple Junction Solar Cells for High Concentrating Photovoltaics

作　　者：蔡建九 单智发 张永 陈凯轩 林志伟 王向武 

机构地区：[1]厦门乾照光电股份有限公司,福建厦门361101

出　　处：《半导体技术》2013年第4期241-247,共7页Semiconductor Technology

基　　金：国家高技术研究发展计划(863计划)资助项目(2011AA050512)

摘　　要：在综述高倍聚光GaInP/InGaAs/Ge三结太阳电池的研究现状与发展趋势的基础上,对高倍聚光太阳电池的关键技术、性能提升方法和可靠性进行了研究。指出提高隧穿电流和降低串联电阻是高倍聚光三结太阳电池的关键技术,并提出了相应的解决方法。采用多异质结构隧穿结提高了隧穿电流,减小横向扩展电阻和栅线电阻降低了总的串联损耗。此外,通过分别提高GaInP顶电池和底电池禁带宽度、降低InGaAs中电池禁带宽度可进一步提高太阳电池的转换效率。最后探讨了高倍聚光太阳电池的可靠性测试标准。The latest developments of GaInP/InGaAs/Ge triple junction solar cells （TJSCs） for high concentrating photovoltaics （HCPV） are summarized. The key technology and the reliability of the TJSCs, as well as the methods for their performance improvements, are also discussed. Increasing the peak tunnel current and decreasing the series resistance are two key points of HCPV. A multi- heterojunction tunnel junction could be used to increase the tunnel current. On the other hand, the overall series resistance could be reduced by reducing the lateral resistance and grid resistance. Furthermore, the efficiency of the TJSCs could be improved by increasing the bandgaps of the top GaInP cell and the bottom cell, or decreasing the bandgap of the middle InGaAs cell. Finally, the reliability evaluation standards of the HCPV cells are discussed.

关 键 词：聚光光伏 三结太阳电池 隧穿电流 串联电阻 可靠性 

分 类 号：TN304.26[电子电信—物理电子学]