低相噪抗振动温补晶振的研制  

Study and Fabrication of Low Phase Noise Vibration-Immuned Temperature Compensated Crystal Oscillator

作　　者：孙敏[1] 黎敏强[1] 陈中平[1] 王占奎[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2013年第4期263-267,共5页Semiconductor Technology

摘　　要：为满足通信系统对振动环境下相位噪声提出的更为严格的要求,提出了一种低相噪、抗振动温补晶振的设计方法。分析了影响温补晶振静态相位噪声的因素,通过ADS仿真对电路参数进行优化,实现了低的静态相位噪声。介绍了振动状态下晶体振荡器相位噪声恶化的原因,应用有限元理论方法对温补晶振的结构进行仿真分析和优化,通过提高结构的自谐振频率来有效降低振动条件下的相位噪声。给出了优化后的相位噪声测试曲线,应用该方法研制的10 MHz温补晶振静态相位噪声达到-100 dBc/Hz@10 Hz,-130 dBc/Hz@100 Hz,-155 dBc/Hz@1 kHz,-160 dBc/Hz@10 kHz;在Grms为6.06 g随机振动条件下,动态相位噪声达到-128 dBc/Hz@1 kHz,优化了近30 dBc/Hz@1 kHz。In order to improve the phase noise in communication system under vibration condition, a design method of a low phase noise anti-vibration TCXO was presented. The factor contributing phase noise in the TCXO was analyzed. The software of ADS was used static phase noise of TCXO is improved. The reasons for analyzed in theory, and the finite element analysis was in parameter optimization. The result shows that the TCXO phase noise degradation under Vibration were used in the structure analysis to improve the self- resonance frequency. The experiment result shows that the static phase noise of 10 MHz TCXO designed in this method is - 100 dBc/Hz@ 10 Hz, - 130 dBc/Hz@ 100 Hz, - 155 dBc/Hz@ 1 kHz, - 160 dBc/Hz@ 10 kHz. Under the random vibration condition of Grms =6. 06 g,the phase noise is -128 dBc/Hz@ 1 kHz. Optimization is up to 30 dBc/Hz@ 1 kHz.

关 键 词：温补晶振 有限元分析 相位噪声 随机振动 仿真 

分 类 号：TN752.2[电子电信—电路与系统]