箍缩反射离子二极管的研制  

Manufacture of a Pinch-Reflex Ion Diode

作　　者：石磊[1] 王永昌[1] 邱爱慈[2] 何小平[2] 张嘉生[2] 吴祖堂[2] 

机构地区：[1]西安交通大学,西安710049 [2]西北核技术研究所

出　　处：《西安交通大学学报》2000年第8期104-107,共4页Journal of Xi'an Jiaotong University

基　　金：国家自然科学基金资助项目! (1 99750 37)

摘　　要：采用箍缩反射离子二极管 ,使阴极发射的电子多次穿过阳极膜并向轴线箍缩 ,增加了它在二极管中的平均渡越时间 ,从而提高了离子流产生效率 .根据顺位流模型 ,设计了 2 0 0kV强流脉冲离子束加速器的箍缩反射离子二极管 ,得到了峰值为 1 6kA、脉宽约 2 0ns的离子束流 .Pinch diodes are used extensively for ion beam production. In pinch reflex ion diodes, electrons are emitted from the cathode reflex through the anode foil. This is a result of their interactions with the azimuthal magnetic field due to current flowing through the central button. Further enhancement of the electron path length and average transit time are obtained, improving the ion production efficiency. According to the parapotential flow model, a pinch reflex ion diode is designed using the 200 kV intense pulsed ion accelerator. The ion beam peak current of 1 6 kA is obtained with a pulse width of about 20 ns.

关 键 词：箍缩反射离子二极管 加速器 强流脉冲离子束 

分 类 号：TL503[核科学技术—核技术及应用] TN31[电子电信—物理电子学]