Polycrystalline diamond MESFETs by Au-mask technology for RF applications  

作　　者：FENG ZhiHong WANG JingJing HE ZeZhao DUN ShaoBo YU Cui LIU JinLong ZHANG PingWei GUO Hui LI ChengMing CAI ShuJun 

机构地区：[1]Science and Technology on ASIC Laboratory,Hebei Semiconductor Research Institute [2]School of Information Engineering,Hebei University of Technology [3]School of Materials Science and Engineering,University of Science and Technology Beijing [4]Hebei Institute of Laser

出　　处：《Science China(Technological Sciences)》2013年第4期957-962,共6页中国科学（技术科学英文版）

摘　　要：Metal-semiconductor field effect transistors (MESFETs) were fabricated on H-terminated polycrystalline diamond.The DC characteristics of the p-channel MESFET showed a maximum drain current density of 204 mA/mm at a gate-source voltage of 6 V,and a maximum transconductance of 20 mS/mm at a gate-source voltage of 1.5 V.The small signal S-parameters of MESFET with 2 100 m gate width and 2 m gate length were measured.An extrinsic cut-off frequency (fT) of 1.7 GHz and the maximum oscillation frequency (fmax) of 2.5 GHz were obtained,which was the first report on diamond MESFETs with RF characteristics in China.

关 键 词：DIAMOND wide band gap semiconductors carbon based electronics semiconductor devices RF performances 

分 类 号：TN386[电子电信—物理电子学] TG711[金属学及工艺—刀具与模具]