外腔半导体激光器调谐输出双稳环跳变幅度的变化  

Magnitude of the Carrier Density Jumps of Hysteresis Loop on Output of External Cavity Semiconductor Lasers

作　　者：李群[1] 李焱 陈建国[2] 

机构地区：[1]淮北煤炭师范学院物理系,淮北235000 [2]四川大学光电系,成都610064

出　　处：《淮北煤师院学报（自然科学版）》2000年第2期36-38,50,共4页Journal of Huaibei Teachers College(Natural Sciences Edition)

摘　　要：研究了强反馈条件下光栅调谐外腔半导体激光器 (ECLD)的双稳特性 .利用求得的载流子—频率 (N -ν)曲线上的双稳环跳变点处的载流子密度的解析表达式 ,分析了ECLD几个关键参量对载流子密度跳变幅度的影响 .Bistable characteristics of a grating tuned external cavity semiconductor laser (ECLD) with a strong external feedback have been studied.Starting from the derived explicit analytical expression of output power at the jump points of the hysteresis loops on power versus frequency curve.Then,the variation of magnitude of the power jumps of hysteresis loop with several vital parameters of the ECLD has been analysed.

关 键 词：外腔半导体激光器 跳变幅度 调谐输出曲线 双稳 

分 类 号：TN248.4[电子电信—物理电子学]