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机构地区:[1]Suzhou-CAS Semiconductor Integration R&D Center
出 处:《Journal of Semiconductors》2013年第4期69-75,共7页半导体学报(英文版)
摘 要:A 2.4 GHz, direct-conversion RF transmitter front-end with an up converter and PA driver is fabricated in a 0.13/zm CMOS process for the reliable transmission of 54 Mb/s OFDM signals. The front-end output power is -3 dBm while the corresponding EVM is -27 dB which is necessary for the 802.11g standard of EVM at-25 dB. With the adopted gain control strategy the output power changes from -14.3 to -3.7 dBm with every step 0.8 dB (20%) which covers the gain variation due to working temperature and process. A power detector indicates the output power and delivers a voltage to the baseband to control the output power.A 2.4 GHz, direct-conversion RF transmitter front-end with an up converter and PA driver is fabricated in a 0.13/zm CMOS process for the reliable transmission of 54 Mb/s OFDM signals. The front-end output power is -3 dBm while the corresponding EVM is -27 dB which is necessary for the 802.11g standard of EVM at-25 dB. With the adopted gain control strategy the output power changes from -14.3 to -3.7 dBm with every step 0.8 dB (20%) which covers the gain variation due to working temperature and process. A power detector indicates the output power and delivers a voltage to the baseband to control the output power.
关 键 词:802.11 g RF transmitter front-end up converter RFVGA PA driver EVM
分 类 号:TN830[电子电信—信息与通信工程]
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