有源忆阻器伏安关系与有源忆阻电路频率特性研究  

Voltage-Current Relationship of Active Memristor and Frequency Characteristic of Active Memristive Circuit

作　　者：包伯成[1] 邹相[1] 胡文[2] 武花干[3] 

机构地区：[1]常州大学信息科学与工程学院,江苏常州213164 [2]南京航空航天大学电子信息工程学院,江苏南京210016 [3]南京理工大学电子工程系,江苏南京210094

出　　处：《电子学报》2013年第3期593-597,共5页Acta Electronica Sinica

基　　金：国家自然科学基金(No.51277017);江苏省自然科学基金(No.BK2012583)

摘　　要：忆阻器是具有记忆特性的非线性电阻器,是物理上新实现的第四种基本二端电路元件.以分段二次型非线性函数描述的有源磁控忆阻器为例,分析了有源忆阻器的伏安关系,研究了有源忆阻器与电容串联电路(简称有源WC电路)的频率响应特性,并与有源RC电路进行了比较分析.结果表明:有源忆阻器的伏安特性曲线为紧磁滞回线,且依赖于其内部初始状态;有源WC电路与有源RC电路均呈现高通特性,但前者为超前网络而后者为滞后网络.基于有源磁控忆阻器的等效电路进行了电路仿真,其结果很好地验证了理论分析结果.Memristor, a nonlinear resistor with memory property, is the fourth basic two-terminal circuit element realized physically recently. In this paper, an active flux-controlled memristor with piecewise-quadratic nonlinearity is taken as an example, upon which voltage-current relationship of the active memfistor is analyzed, and frequency response characteristic of a series circuit consisting of an active flux-controlled memristor and a capacitor （simplified by active WC circuit）is studied. The comparison analy- sis between active WC circuit and active RC circuit is performed. The results indicate that voltage-current characteristics of the active memristor exhibit pinched hysteresis loops and depend on the inner initial states; both active WC circuit and active RC circuit show high pass properties, but the former is a lead network and the latter is a lag network. Circuit simulations are performed based on e- quivalent circuit of active flux-controlled memristor, which well verify theoretical analysis results.

关 键 词：有源忆阻器 伏安关系 有源WC电路 频率特性 

分 类 号：TM13[电气工程—电工理论与新技术]