High Q,high frequency,high overtone bulk acoustic resonator with ZnO films  

作　　者：Meng-wei LIU Ming-bo ZHU Jun-hong LI Cheng-hao WANG 

机构地区：[1]State Key Laboratory of Acoustics,Institute of Acoustics,Chinese Academy of Sciences

出　　处：《Journal of Zhejiang University-Science C(Computers and Electronics)》2013年第4期279-282,共4页浙江大学学报C辑（计算机与电子（英文版）

基　　金：Project (Nos. 11074274 and 11174319) supported by the National Natural Science Foundation of China

摘　　要：Bulk acoustic wave resonators with piezoelectric films have been widely explored for the small size and high quality factor （Q） at GHz. This paper describes a high overtone bulk acoustic resonator （HBAR） based on AI/ZnO/AI sandwich layers and c-axis sapphire substrate. ZnO film with high quality c-axis orientation has been obtained using DC magnetron sputtering. The fabricated HBAR presents high Q at the multiple resonances from a 0.5-4.0 GHz wide band with a total size （including the contact pads） of 0.6 mm×0.3 mm×0.4 mm, The device exhibits the best acoustic coupling at around 2.4 GHz, which agrees with the simulation results based on the one-dimensional Mason equivalent circuit model. The HBAR also demonstrates Q values of 30 000, 25 000, and 6500 at 1.49, 2.43, and 3.40 GHz, respectively. It is indicated that the HBAR has potential applications for the low phase noise high frequency oscillator or microwave signal source.Bulk acoustic wave resonators with piezoelectric films have been widely explored for the small size and high quality factor(Q) at GHz.This paper describes a high overtone bulk acoustic resonator(HBAR) based on Al/ZnO/Al sandwich layers and c-axis sapphire substrate.ZnO film with high quality c-axis orientation has been obtained using DC magnetron sputtering.The fabricated HBAR presents high Q at the multiple resonances from a 0.5-4.0 GHz wide band with a total size(including the contact pads) of 0.6 mm×0.3 mm×0.4 mm.The device exhibits the best acoustic coupling at around 2.4 GHz,which agrees with the simulation results based on the one-dimensional Mason equivalent circuit model.The HBAR also demonstrates Q values of 30 000,25 000,and 6500 at 1.49,2.43,and 3.40 GHz,respectively.It is indicated that the HBAR has potential applications for the low phase noise high frequency oscillator or microwave signal source.

关 键 词：Bulk acoustic wave resonator Quality factor （Q） ZnO film Mason＇s model 

分 类 号：TN629.1[电子电信—电路与系统]