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机构地区:[1]陕西咸阳彩虹集团公司荧光粉厂,陕西咸阳712021 [2]中国科学院长春物理研究所,吉林长春130021
出 处:《发光学报》1999年第4期316-319,共4页Chinese Journal of Luminescence
摘 要:在红色荧光粉Y2O2S。Eu3+的制备过程中掺人了不同浓度的Ga2O3发现在掺入适当浓度的Ga2O3的情况下.可以增强发射强度并改善其电压特性,即在保证所要求的发光颜色、粒径和其它物理及化学特性的条件下.可改善发射强度与激发电压间的关系.讨论和分析了发射强度被增强的起因.Ga3+对Y3+的置换,减少了因Eu3+对Y3+置换所引起的晶格的畸变,从而减弱了无辐射过程及因晶格畸变所造成的能量损失.这样,Eu3+离子晶场环境的改善,增强了Y2O2S:Eu3+阴极射线发射光谱中主发射峰626nm,704nm的发射强度.In this paper, different concentrations of Gd2O3 have been doped in the preparationof red phosphors Y2O2S: Eu3+. It is discovered that the emission intensity is enhanced5% and the voltage character (Relation between emission intensity and excitation voltage) is improved by doping proper concentration of Gd2O3 under the emission color, particle size and the properties of physics and chemistry are in keep with the request. Theenhancement origins of emission intensity are discussed and analyzed preliminarily. It islacely that the abnormal change of crystal checks that is led by the substitution of largerradius Eu3+ ion for smaller radius Y3+ ion is improved by substitution of Gd3+ ion forY3+ ion, the process of no radiation and crystal defect which lose energy are cut down.The improvement of Eu3+ ion's crystal field condition give rise to enhance of the mainemission peak 626nm, 616nm (to be attributed to 5Do→7F2) and 704urn (to be attributedto 5Do→7F4) in the CR spectra of Y2O2S: Eu3+.
分 类 号:TN104.3[电子电信—物理电子学] O482.31[理学—固体物理]
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