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机构地区:[1]泉州师范学院物理与信息工程学院,福建泉州362000
出 处:《光电子.激光》2013年第4期673-678,共6页Journal of Optoelectronics·Laser
基 金:福建省自然基金资助(2011J01359);福建省教育厅JK类科研(JK2011043);泉州市科技局基金(2011G16)资助项目
摘 要:采用真空热蒸镀的方法制备了磷光与荧光相结合的多层白色有机电致发光器件(OLED)。将绿光[Ir(ppy)3]磷光掺杂染料掺杂到母体CBP中作为绿光发光层;荧光材料DCM2以亚单层的方式插入Alq3中作为红光发光层;DPVBi为蓝光发光层。器件的结构为ITO/NPB(40nm)/DPVBi(dnm)/CBP:Ir(ppy)38%(5nm)/Alq3(5nm)/DCM2(0.05nm)/Alq3(45nm)/LiF(1nm)/AI(200nm)。实验中通过改变蓝光发光层的厚度,得到了高效率的白光OLED,器件的最大电流效率可达6.75cd/A,最大功率效率达2.67lm/W,最大亮度达30440cd/m2。此外,当电压从4V变化到14V时色坐标从(0.59,0.39)变化到(0.35,0.38),基本处于白光区。本文器件的特点在于其性能可以通过简单调整DPVBi的厚度,避免了使用多掺杂层工艺的复杂性。Generating the broadband white light typically requires two or three types of emitters, which increases complication in material selection and device design. In this paper, a white organic light-emitting device (WOLED) based on phosphorescent emissive layer combined with fluorescent emitter has been fabricated by vacuum deposition method,in which Ir(ppy)3 was doped into CBP host as green emitting layer, sub-monolayer E)CM2 was inserted in the electron transporting layer as red emitting layer, and fluorescent blue material DPVBi was employed in the WOLED,respectively. The structure of the device is ITO/NPB(40 nm)/DPVBi(d um)/CBP:Ir(ppy)38%(5 nm)/Alq3 (5 nm)/DCM2(0.05 nm)/Alq3 (45 nm)/LiF(1 nm)/Al(200 ran). The efficient WOLED is obtained by varying the thickness of the blue emitting layer. The maximum luminance, electroluminescence (EL) efficiency, power efficiency of the device with the thickness of 12 nm DPVBi are 30440 cd/ma ,6.75 cd/A,2.67 hn/W,respectively. Moreover , the Commission Internationale De L t Eclairage ( CIE ) coordinates of the device vary from (0. 59, 0.39) at 4 V to (0. 35,0. 38) at 14 V generally within the white region. The performance of the WOLED may be tuned by changing the thickness of DPVBi. This approach is expected to reduce manu- facture cost and avoid the complexity of co-deposition process in thermal evaporation.
关 键 词:白色有机发光器件(OLED) 亚单层 效率 色坐标
分 类 号:TN383[电子电信—物理电子学]
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