基于PS球刻蚀技术制备纳米孔滤波器结构的优化分析  

Optimizing and Analyzing of The Structural Parameters of Metallic Nano-hole Array Fabricated by PS Sphere's Etching Technology

作　　者：任良科[1] 杜惊雷[1] 李淑红[1] 张志友[1] 侯宜栋[1] 高福华[1] 黄霞[1] 

机构地区：[1]四川大学物理科学与技术学院纳光子技术研究所,四川成都610064

出　　处：《发光学报》2013年第4期456-462,共7页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61078047)资助项目

摘　　要：金属纳米孔阵列作为彩色滤波器件在OLED中有很好的应用前景。本文提出利用胶体晶体刻蚀与真空沉积技术制作大面积金属纳米孔阵列滤波器,并用FDTD模拟优化所需要加工的金属孔阵列的结构参数,分析了其滤波效果及其物理规律和机制。研究表明:在选择粒径为720 nm的PS球、刻蚀剩余粒径为240nm、金属膜厚度为120 nm的条件下,满足CIE红光显示标准的共振波长为704.06 nm,强度透射率为52%,透射谱带宽为24.8 nm。模拟结果为用PS球刻蚀技术制备金属纳米孔阵列的实验提供了理论支持。Metallic nano-hole array based color filter is showing the great potential application for OLED. In this paper, we propose the metallic nano-hole array based filter in large area by emplo- ying colloidal etching and vacuum depositing technology. To ease the fabrication, the structural pa- rameters of the nano-hole array on the transmittance of the red light as well as the bandwidth is sys- tematically studied and analyzed. The simulation results indicate that when the diameter of the nano- hole is 240 nm and the film thickness is 120 nm, the transmitted resonant wavelength for red display is 704.06 nm, the intensity transmission is 52% , and the bandwidth is only 24.8 nm. The simula- tion results provide a theoretic guide for the fabrication of metallic nano-hole array by PS sphere＇s etching and vacuum depositing technology.

关 键 词：有机发光二极管(OLED) 彩色滤波器 胶体晶体 强度透射率 

分 类 号：TN383.1[电子电信—物理电子学]