微弧氧化制备氮掺杂纳米晶TiO_2薄膜  

Preparation of N Dopped Nano TiO_2 Film by Microarc Oxidation

作　　者：敖乐[1] 张谷令[2] 刘裕明[1] 王文忠[2] 张琳霞[1] 杨叶[2] 

机构地区：[1]中央民族大学生命与环境科学学院,北京100081 [2]中央民族大学理学院,北京100081

出　　处：《湖北农业科学》2012年第21期4860-4864,共5页Hubei Agricultural Sciences

基　　金：国家自然科学基金(10705056);"985"工程建设项目(98507-010009);中央民族大学自由探索项目(0910KYZY48);中央民族大学"211工程"三期"创新人才培养项目"

摘　　要：以十水合四硼酸钠、氢氧化钠、六次甲基四胺为电解液,采用双脉冲微弧氧化方法在钛基底直接制备纳米晶TiO2薄膜。钛基底微弧氧化所生长的TiO2薄膜表面由直径10～60 nm的小颗粒堆积成多孔菜花状。脉冲频率对薄膜的组分、孔隙率和表面粗糙度都有较大的影响,而生长时间则通过小颗粒堆积影响薄膜的表面粗糙度。高频条件下薄膜中锐钛矿相含量比低频时稍高,单次脉冲期间反应生成物的温度是控制锐钛矿相与金红石相比例的主要因素。Cauliflower-like N doped nano titania film,of which the surface was stacked by nano-particles with diameter of 10～60 nm,was prepared on titanium substrate by dipulse microarc oxidation in the electrolyte of Na2B4O7·10H2O,NaOH,and C6H12N4.The frequency was a main factor on constituents,porosity and roughness of the film,while the processing time would impact the surface roughness through accumulation of particles.Under higher frequency conditions,TiO2 films have more anatase phase than rutile phase,and it could be attributed to the control of outgrowth temperature during single pulse.While under lower frequency conditions,the band gap narrowing of N doped TiO2 films became more obvious.

关 键 词：微弧氧化 纳米晶TiO2 薄膜 氮掺杂 

分 类 号：O484.1[理学—固体物理] O643.36[理学—物理]