微量Bi_2O_3对ZnVSnO基压敏陶瓷显微结构和电学非线性的影响  

Effect of minor Bi_2O_3 doping on the microstructure and electrical nonlinearity of the ZnVSnO based varistor ceramics

作　　者：赵鸣[1,2] 吴晓亮[2] 李海松[2] 王聚云[2] 张锰[2] 

机构地区：[1]内蒙古自治区白云鄂博矿多金属资源综合利用重点实验室,内蒙古包头014010 [2]内蒙古科技大学材料与冶金学院,内蒙古包头014010

出　　处：《功能材料与器件学报》2012年第6期459-462,472,共5页Journal of Functional Materials and Devices

基　　金：内蒙古自治区创新团队"冶金与资源利用"(83101002)基金

摘　　要：采用传统混合氧化物工艺在800℃经4小时烧结制备了0.01-0.2mol%Bi2O3掺杂的ZnO-V2O5-SnO2(ZnVSnO)基压敏陶瓷,采用电子天平、SEM、XRD和I-V测试仪研究了其密度、显微结构和电性能随Bi2O3含量的变化。结果表明:随Bi2O3含量升高,ZnVSnO基陶瓷密度变化不大,相对密度均超过了98%;样品均由ZnO主晶相和少量的Zn2SnO4、Bi2Sn2O7第二相组成,但平均晶粒直径从2.13μm降到1.54μm,样品的压敏场强和非线性系数随之升高。当Bi2O3掺杂量为0.2mol%时样品性能最优,其压敏场强、非线性系数和漏电流密度分别为2842V/mm、51.2和0.0925mA/cm2。ZnO - V2O5 - SnO2 based varistor ceramics with 0.01 -0.2mo1% Bi2O3 were prepared. The conventional mixing- oxides procedure was adopted. The samples were sintered at 800℃ for four hours in ambient of air. The effect of Bi2O3 addition on the relative density, microstructure and electrical prop- erties of the ZnVSnO ceramics were systematically investigated by means of high precision scale, SEM, XRD and an automatic I - V monitor. The results show ： the relative densities of all tested samples exceed 98% of their theoretical density, indicating the increase of Bi2O3 within the studied range of 0.01 -0. 2mol% has no obvious influence upon the density of the ZnVSnO ceramics. Meanwhile, the average grain sizes of the ceramics decrease from 2. 13μm to 1. 54μm. As a result, the breakdown voltage of the ceranlics was found to increase at the same time. Besides of ZnO main phase, all four studied samples con- sist of Zn2SnO4 and BizSn207 as their secondary phases. Samples with 0.2mol% Bi203 exhibit the opti- mum properties. Their breakdown field, nonlinear coefficient and leak current density of the optimum samples are 2842V/mm, 51.2 and 0. 0925mA/cm2 respectively.

关 键 词：ZnO—V2O5-SnO2基压敏陶瓷 BI2O3 显微结构 电学非线性 

分 类 号：TN379[电子电信—物理电子学]