具有外部注入光场的半导体激光器的不稳定性研究  

Instability of Semiconductor Laser with External Light Injection

作　　者：雷璐璐[1] 郭奇志[1] 

机构地区：[1]上海大学理学院物理系,上海200444

出　　处：《激光与光电子学进展》2013年第4期145-151,共7页Laser & Optoelectronics Progress

摘　　要：通过求得外部光注入半导体激光器的动力学方程系统的稳态解,并对其进行线性稳定性分析,研究了具有外部注入光场的半导体激光器的不稳定性。结果表明外部光场注入系数及线宽增强参数对半导体激光器的稳定性都有较大的影响,注入系数和线宽增强参数越大,激光器越不稳定。利用数值模拟得到系统时序图和相图,验证了这一结论。The instability of semiconductor laser with external light injection is studied by solving dynamical equations of the system and analyzing its linear stability. It is shown that the injection coefficient and the linewidth enhancement factor play important roles in the stability of system, and the larger the injection coefficient and linewidth enhancement factor are, the more unstable the system becomes. The corresponding time-series diagrams and phase diagrams obtained by numerical simulation verify this conclusion.

关 键 词：非线性光学 半导体激光器 外部光注入 

分 类 号：O437[机械工程—光学工程]