Hg_(1-x)Cd_xTe在高压下的电学性质、状态方程与相变  

ELECTRICAL PROPERTIES,EQUATIONS OF STATE AND PHASE TRANSITIONS IN Hg_(1-x)Cd_xTe AT HIGH PRESSURE

作　　者：鲍忠兴[1,2,3] 褚君浩[4] 柳翠霞[1] 顾惠成[1] 刘克岳 李标[4] 王金义 

机构地区：[1]中国科学院物理研究所 [2]中国科学院国际材料物理中心,沈阳110015 [3]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083 [4]中国科学院上海技术物理研究所红外物理国家重点实验室 [5]华北光电研究所

出　　处：《高压物理学报》2000年第1期28-32,共5页Chinese Journal of High Pressure Physics

基　　金：中国科学院红外物理国家重点实验室基金资助

摘　　要：在金刚石压砧装置上 ,采用电阻和电容测量方法研究了Hg1-xCdxTe(x =0 .19,0 .2 2 )在室温下、2 0GPa内的电阻、电容与压力的关系。实验结果表明 :它们分别在 0 .7～ 1.8GPa与 8.6GPa左右以及在 1.6GPa左右与 8.3GPa左右发生了两次电子结构相变 ;分别在 2GPa左右与 8.6GPa以上以及在 1.6GPa左右与 8.3GPa以上发生了两次晶体结构相变。同时 ,还在活塞 圆筒式p V关系测量装置上研究了Hg1-xCdxTe(x =0 .2 1)在室温下、4.5GPa内的p V关系。实验结果发现它在 2 .1GPa左右发生了相变。给出了它在相变前后的状态方程。The resistance pressure and capacitance pressure relationships for Hg 1- x Cd x Te( x =0.19, 0.22 ) at room temperature at pressures up to 20GPa have been studied in a diamond anvil cell using resistance and capacitance measurements established by us.The experimental results show that Hg 1- x Cd x Te( x =0.19,0.22) undergo two electronic structure transitions at about 0.7～1.8GPa,8.6GPa and 1.6 GPa,8.3GPa,respectively,and two crystal structure transitions at about 2GPa,above 8.6GPa and about 1.6GPa,above 8.3GPa,respectively.In the present work,the p V relationship for Hg 1- x Cd x Te( x = 0.21 ) at room temperature and up to 4.5GPa has been studied using the piston cylinder type measurement device for the p V relationship.The experimental results indicate that the phase transition in Hg 1- x Cd x Te( x =0.21) occurs at about 2.1GPa.Its equations of state before and after the phase transition have been given.

关 键 词：电阻 电容 状态方程 相变 半导体 高压 

分 类 号：O521.2[理学—高压高温物理]