Clicking ferrocene to halogenated boron-doped diamond surfaces  

作　　者：Mei Wang Sabine Szunerits Rabah Boukherroub Mu-Sen Li 

机构地区：[1]Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University [2]Institute of Interdisciplinary Research (IRI, USR-CNRS 3078) and Institute of Electronics, Microelectronics and Nanotechnology (IEMN, UMR-CNRS 8520), Cite Scientifique, Avenue Poincare-BP 60069, 59652 Villeneuve d'Ascq, France

出　　处：《Rare Metals》2013年第1期100-104,共5页稀有金属（英文版）

基　　金：The National Nature Science Foundation of China(Nos.51002090 and 50972078);the Outstanding Young Scientist Research Award Fund of Shandong Province(No.BS2010CL028)were gratefully acknowledged for financial support

摘　　要：The halogenated boron-doped diamond （BDD） surfaces were reacted with sodium azide through a nucle- ophilic substitution reaction. The resulting azide-terminated BDD surfaces were used to trigger the ＂click＂ reaction. Because of the attractive electrochemical properties of ferrocene-containing molecules, such as fast electron transfer rates, reversible redox activities, and favorable redox potentials, we show that ferrocene derivatives can be grafted onto non-oxidized diamond surfaces by ＂click chemistry＂. These redox-active ferrocene-containing layers on a BDD surface, because of their ability to store and release charges reversibly, have the potential to be used as hybrid molecular/semiconductor memory devices.The halogenated boron-doped diamond （BDD） surfaces were reacted with sodium azide through a nucle- ophilic substitution reaction. The resulting azide-terminated BDD surfaces were used to trigger the ＂click＂ reaction. Because of the attractive electrochemical properties of ferrocene-containing molecules, such as fast electron transfer rates, reversible redox activities, and favorable redox potentials, we show that ferrocene derivatives can be grafted onto non-oxidized diamond surfaces by ＂click chemistry＂. These redox-active ferrocene-containing layers on a BDD surface, because of their ability to store and release charges reversibly, have the potential to be used as hybrid molecular/semiconductor memory devices.

关 键 词：HALOGENATED AZIDE Click chemistry FERROCENE 

分 类 号：O611.4[理学—无机化学]