Cu2O薄膜的电化学沉积和生长机理研究  

Study on the Growth Mechanism of Cu_2O Films by Electrochemical Deposition

作　　者：赵文燕[1,2] 田传进[1] 汪长安[1,3] 谢志鹏[1,3] 杨海滨[2] 付乌有[2] 

机构地区：[1]景德镇陶瓷学院材料科学与工程学院,景德镇333403 [2]吉林大学超硬材料国家重点实验室,长春130012 [3]清华大学材料科学与工程系,北京100084

出　　处：《人工晶体学报》2013年第3期452-455,共4页Journal of Synthetic Crystals

基　　金：江西省景德镇市科技局基金(103037201);清华大学新型陶瓷与精细工艺国家重点实验室开放课题基金;吉林大学超硬材料国家重点实验室开放课题基金(201313)

摘　　要：采用酸性醋酸铜体系,在透明导电玻璃(ITO)上恒电位沉积Cu2O薄膜,研究阴极还原Cu2O的电化学行为,利用X射线衍射(XRD)和场发射扫描电子显微镜(SEM)分析了Cu2O薄膜的微观结构和表面形貌,通过控制电沉积时间,研究Cu2O薄膜的表面形貌变化规律,讨论了Cu2O的生长机理。Cu2O thin film were deposited on transparent conductive glass （ITO） prepared by constant potential deposition, using acid copper acetate system, and the electrochemical behavior of the cathode reduction Cu2O was studied. The microstructure and surface morphologies of Cu2O films were characterized by X-ray diffraction （XRD） and field emission scanning electron microscopy （SEM）. The laws of Cu2O films surface morphology changes with electrochemical deposition time increases were studied by SEM. The growth mechanism of Cu2O film was discussed .

关 键 词：Cu2O薄膜 电化学沉积 生长机理 

分 类 号：O484[理学—固体物理]