高品级金刚石富晶区生长条件和动态匹配合成工艺  

Growth Condition of the Ideal Growth Area and Dynamic Matching Technology for High-quality Diamond Crystal

作　　者：王秦生[1,2] 林玉 赵清国 李利红 刘杰 

机构地区：[1]中原工学院,郑州450007 [2]河南省金刚石及制品工程技术研究中心,郑州450001

出　　处：《人工晶体学报》2013年第3期475-478,共4页Journal of Synthetic Crystals

基　　金：国家火炬计划重点项目(2006GH031192)

摘　　要：在金刚石合成过程中,采用压力与温度双参数动态匹配工艺,外加负荷缓慢上升而外加功率缓慢下降,使得压力和温度维持在富晶区生长区间,并且可以沿着金刚石等质量线方向在限定的范围内移动,保持压力与温度动态匹配,金刚石得以长时间稳定地连续生长,单次合成金刚石可达580克拉,高品级率达60%,产量和高品级率均创新高。During the process of synthesizing diamond, the technology of two-parameter dynamic matching of pressure and temperature was used. In this way, attached load increases gradually while attached power decreases little by little to keep pressure and temperature in the rich diamond crystal growth area and allow them to move in a restricted area in direction of identical quality line. As a result, the pressure and temperature could match dynamically and diamond crystal could grow steadily and continuously in a long time period to produce high-quality product, per unit output reaches as much as 580cts, 60% of which are of high grade.

关 键 词：高品级金刚石 富晶区 生长条件 动态匹配工艺 

分 类 号：O78[理学—晶体学]